Recombination activity of manganese in p- and n-type crystalline silicon

Semiconductor Science and Technology

Volumn 22, Issue 2, 2007, Pages 163-167

  Macdonald, D ^a   Rosenits, P ^a,b   Deenapanray, P N K ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; IMPURITIES; SILICON;

CARRIER LIFETIME MEASUREMENTS; MN IMPLANTATION DOSE; RECOMBINATION ACTIVITY;

MANGANESE;

EID: 34247201628     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/2/028     Document Type: Article

References (27)

1. Graff K 2000 Metal Impurities in Silicon-Device Fabrication (Springer Series in Material Science vol 24) 2nd edn ed R Hull et al (Berlin: Springer)
2. Weber E R 1983 Appl. Phys. A 30 1-22
3. Buonassisi T et al 2006 Prog. Photovolt. Res. Appl. 14 513-31
4. Evwaraye A O 1977 J. Appl. Phys. 48 3813-8
5. Czaputa R, Feichtinger H, Oswald J, Sitter H and Haider M 1985 Phys. Rev. Lett. 55 758-60
6. Gilles D, Bergholz W and Schröter W 1986 J. Appl. Phys. 59 3590-3
7. Haider M, Sitter H, Czaputa R, Feichtinger H and Oswald J 1987 J. Appl. Phys. 62 3785-90
8. Bever T, Emanuelsson P, Kleverman M and Grimmeiss H G 1989 Appl. Phys. Lett. 55 2541-3
9. Nakashima H and Hashimoto K 1991 J. Appl. Phys. 69 1440-5
10. Carlson R O 1956 Phys. Rev. 104 937-41
11. Watters R L and Ludwig G W 1956 J. Appl. Phys. 27 489-96
12. Gilles D, Schröter W and Bergholz W 1990 Phys. Rev. B 41 5770-82
13. Macdonald D, Deenapanray P N K and Diez S 2004 J. Appl. Phys. 96 3687-91
14. Sinton R A and Cuevas A 1996 Appl. Phys. Lett. 69 2510-2
15. Sachdeva R, Istratov A A, Deenapanray P N K and Weber E R 2005 Phys. Rev. B 71 195-208
16. Cousins P J, Neuhaus D H and Cotter J E 2004 J. Appl. Phys. 95 1854
17. Shockley W and Read W T 1952 Phys. Rev. 87 835-42
18. Hall R N 1952 Phys. Rev. 87 387
19. Zoth G and Bergholz W 1990 J. Appl. Phys. 67 6764-71
20. Istratov A A, Hieslmair H and Weber E R 1999 Appl. Phys. A 69 13-44
21. Macdonald D, Roth T, Deenapanray P N K, Trupke T and Bardos R A 2007 Appl. Phys. Lett. submitted
22. Mishra K 1996 Appl. Phys. Lett. 68 3281-3
23. Pavelka T 1998 Problems and possibilities of comparing different lifetime measuring instruments and techniques Recombination Lifetime Measurements in Silicon vol STP 1340 ed D C Gupta et al (West Conshohocken: American Society for Testing and Materials)
24. Park S H and Schroder D K 1995 J. Appl. Phys. 78 801-10
25. Sachdeva R, Istratov A A and Weber E R 2001 Appl. Phys. Lett. 79 2937-9
26. Macdonald D 2005 Appl. Phys. A 81 1619-25
27. Bothe K, Sinton R and Schmidt J 2005 Prog. Photovolt. Res. Appl. 13 287-96