Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements

Applied Physics Letters

Volumn 88, Issue 8, 2006, Pages

  Wong, K M ^a   Chim, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL CAPACITANCE; SCANNING CAPACITANCE MICROSCOPY (SCM); SPATIAL DISTRIBUTION;

CAPACITANCE MEASUREMENT; ELECTRIC CONDUCTANCE; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; NANOTECHNOLOGY; SCANNING;

ELECTRON TRAPS;

EID: 33644538586     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2177352     Document Type: Article

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