Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopy

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 649-652

  Lebedinskii, Yu Yu ^a   Zenkevich, A V ^a  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; MOS DEVICES; NICKEL COMPOUNDS; PERMITTIVITY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE STACKS;

GATES (TRANSISTOR);

EID: 34247139250     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.064     Document Type: Article

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