Extremely low density InAs quantum dots with no wetting layer

Chinese Physics Letters

Volumn 24, Issue 4, 2007, Pages 1025-1028

  Huang, She Song ^a   Niu, Zhi Chuan ^a   Ni, Hai Qiao ^a   Zhan, Feng ^a   Zhao, Huan ^a   Sun, Zheng ^a   Xia, Jian Bai ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOCRYSTALS; SEMICONDUCTOR QUANTUM DOTS; WETTING;

ARSENIC ATOM; DEPOSITION THICKNESS; DROPLET EPITAXY; GAAS SUBSTRATES; GROWTH DENSITY; INAS QUANTUM DOTS; INAS-GAAS QUANTUM DOTS; LOWER DENSITY; SUBSTRATE SURFACE; WETTING LAYER;

III-V SEMICONDUCTORS;

EID: 34247117952     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/4/049     Document Type: Article

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