Droplet epitaxy of InAs nanocrystals on GaN/GaAs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2002, Pages 6531-6535

  Pietzonka, Ines ^a   Sass, Torsten ^a   Seifert, Werner ^a   Gray, Struan ^a   Mogensen, Charlotte ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

Atomic force microscopy; Droplet epitaxy; GaN GaAs; InAs; Transmission electron microscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DETERIORATION; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; STACKING FAULTS; SURFACES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

DROPLET EPITAXY; NITRIDATION;

GALLIUM NITRIDE;

EID: 0036147780     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6531     Document Type: Article

References (18)