Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 903-906

  Turchanikov, V I ^a   Nazarov, A N ^a   Lysenko, V S ^a   Carreras, Josep ^b   Garrido, B ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON EMISSION; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; POLYSILICON; SILICA;

CHARGE STORAGE; CHARGE TRAPPING; NANOCLUSTERS; SILICON NANOCRYSTALS;

DATA STORAGE EQUIPMENT;

EID: 14644421598     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.027     Document Type: Conference Paper

References (6)

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