SCOPUS 정보 검색 플랫폼

Volumn 124-125, Issue SUPPL., 2005, Pages 517-520

Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots

Author keywords

Nonvolatile memory cells; Silicon nanodots; Unipolar bias recharging phenomenon

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; ELECTRON EMISSION; MOS CAPACITORS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON;

CHARGE TRAPPING PROCESSES; NONVOLATILE MEMORY CELLS; SILICON NANODOTS; UNIPOLAR BIAS RECHARGING PHENOMENON;

DATA STORAGE EQUIPMENT;

EID: 27844550179 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.068 Document Type: Conference Paper

Times cited : (4)

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