-
1
-
-
35949025517
-
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
-
Jacoboni C., and Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev Mod Phys 55 (1983) 645-705
-
(1983)
Rev Mod Phys
, vol.55
, pp. 645-705
-
-
Jacoboni, C.1
Reggiani, L.2
-
2
-
-
4344599060
-
On the Ballistic Transport in Nanometer-Scaled DG MOSFETs
-
Saint Martin J., Bournel A., and Dollfus P. On the Ballistic Transport in Nanometer-Scaled DG MOSFETs. IEEE Trans Electron Dev 51 7 (2004) 1148-1155
-
(2004)
IEEE Trans Electron Dev
, vol.51
, Issue.7
, pp. 1148-1155
-
-
Saint Martin, J.1
Bournel, A.2
Dollfus, P.3
-
3
-
-
29244435059
-
Understanding Quasi-Ballistics Transport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain
-
Palestri P., Esseni D., Eminente S., Fiegna C., Sangiorgi E., and Selmi L. Understanding Quasi-Ballistics Transport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain. IEEE Trans Electron Dev 52 12 (2005) 2727-2735
-
(2005)
IEEE Trans Electron Dev
, vol.52
, Issue.12
, pp. 2727-2735
-
-
Palestri, P.1
Esseni, D.2
Eminente, S.3
Fiegna, C.4
Sangiorgi, E.5
Selmi, L.6
-
4
-
-
29244485621
-
Understanding quasi-ballistics transport in nano-MOSFETS: Part II Technology scaling along the ITRS
-
Eminente S., Esseni D., Palestri P., Fiegna C., Selmi L., and Sangiorgi E. Understanding quasi-ballistics transport in nano-MOSFETS: Part II Technology scaling along the ITRS. IEEE Trans Electron Dev 52 12 (2005) 2736-2743
-
(2005)
IEEE Trans Electron Dev
, vol.52
, Issue.12
, pp. 2736-2743
-
-
Eminente, S.1
Esseni, D.2
Palestri, P.3
Fiegna, C.4
Selmi, L.5
Sangiorgi, E.6
-
5
-
-
0029292268
-
Monte Carlo Determination of the Intrinsic Small-Signal Equivalent Circuit of MESFETs
-
Gonzàlez T., and Pardo D. Monte Carlo Determination of the Intrinsic Small-Signal Equivalent Circuit of MESFETs. IEEE Trans Electron Dev 42 4 (1995) 605-611
-
(1995)
IEEE Trans Electron Dev
, vol.42
, Issue.4
, pp. 605-611
-
-
Gonzàlez, T.1
Pardo, D.2
-
6
-
-
0032139210
-
Complete Monte Carlo RF Analysis of Real Short-Channel Compound FET's
-
Babiker S., Asenov A., Cameron N., Beaumont S.P., and Barker J.R. Complete Monte Carlo RF Analysis of Real Short-Channel Compound FET's. IEEE Trans Electron Dev 45 8 (1998) 1644-1652
-
(1998)
IEEE Trans Electron Dev
, vol.45
, Issue.8
, pp. 1644-1652
-
-
Babiker, S.1
Asenov, A.2
Cameron, N.3
Beaumont, S.P.4
Barker, J.R.5
-
7
-
-
0035505855
-
Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies
-
Rengel R., Mateos J., Pardo D., Gonzàlez T., and Martìn M.J. Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies. Semicond Sci Technol 16 (2001) 939-946
-
(2001)
Semicond Sci Technol
, vol.16
, pp. 939-946
-
-
Rengel, R.1
Mateos, J.2
Pardo, D.3
Gonzàlez, T.4
Martìn, M.J.5
-
8
-
-
0036852015
-
Numerical and experimental study of a 0.25 m fully depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behavior
-
Rengel R., et al. Numerical and experimental study of a 0.25 m fully depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behavior. Semicond Sci Technol 17 (2002) 1149-1156, 200
-
(2002)
Semicond Sci Technol
, vol.17
-
-
Rengel, R.1
-
9
-
-
14844291284
-
-
Palestri P, Esseni D, Abramo A, Clerc R, Selmi L. Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool. In: Proc European solid state device research conference 2003; 2003. p. 407-10.
-
-
-
-
10
-
-
14844303532
-
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation
-
Palestri P., Eminente S., Esseni D., Fiegna C., Sangiorgi E., and Selmi L. An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation. Solid State Electron 49 5 (2005) 727-732
-
(2005)
Solid State Electron
, vol.49
, Issue.5
, pp. 727-732
-
-
Palestri, P.1
Eminente, S.2
Esseni, D.3
Fiegna, C.4
Sangiorgi, E.5
Selmi, L.6
-
11
-
-
34047274931
-
-
2-based Gate Stacks, in IEDM Technical Digest, 2005. p. 623-26.
-
-
-
-
12
-
-
34047272808
-
-
International Technology Roadmap for Semiconductor, 2003.
-
-
-
-
13
-
-
0026257978
-
An extended proof of the Ramo-Shockley Theorem
-
Kim H., Min H., Tang T., and Park Y. An extended proof of the Ramo-Shockley Theorem. Solid State Electron 34 11 (1992) 1251-1253
-
(1992)
Solid State Electron
, vol.34
, Issue.11
, pp. 1251-1253
-
-
Kim, H.1
Min, H.2
Tang, T.3
Park, Y.4
-
15
-
-
33744802250
-
Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme
-
Palestri P., Barin N., Esseni D., and Fiegna C. Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme. IEEE Trans Electron Dev 53 6 (2006) 1433-1442
-
(2006)
IEEE Trans Electron Dev
, vol.53
, Issue.6
, pp. 1433-1442
-
-
Palestri, P.1
Barin, N.2
Esseni, D.3
Fiegna, C.4
-
17
-
-
0022723607
-
A simple regional analysis of transit times in bipolar transistors
-
van den Biesen J.J.H. A simple regional analysis of transit times in bipolar transistors. Solid State Electronics 29 5 (1986) 529-534
-
(1986)
Solid State Electronics
, vol.29
, Issue.5
, pp. 529-534
-
-
van den Biesen, J.J.H.1
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