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Volumn 51, Issue 4 SPEC. ISS., 2007, Pages 604-610

Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs

Author keywords

Device simulation; Monte Carlo; MOSFET; RF analysis

Indexed keywords

COMPUTER SIMULATION; MATRIX ALGEBRA; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS;

EID: 34047258134     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.023     Document Type: Article
Times cited : (5)

References (17)
  • 1
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • Jacoboni C., and Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev Mod Phys 55 (1983) 645-705
    • (1983) Rev Mod Phys , vol.55 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 2
    • 4344599060 scopus 로고    scopus 로고
    • On the Ballistic Transport in Nanometer-Scaled DG MOSFETs
    • Saint Martin J., Bournel A., and Dollfus P. On the Ballistic Transport in Nanometer-Scaled DG MOSFETs. IEEE Trans Electron Dev 51 7 (2004) 1148-1155
    • (2004) IEEE Trans Electron Dev , vol.51 , Issue.7 , pp. 1148-1155
    • Saint Martin, J.1    Bournel, A.2    Dollfus, P.3
  • 3
    • 29244435059 scopus 로고    scopus 로고
    • Understanding Quasi-Ballistics Transport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain
    • Palestri P., Esseni D., Eminente S., Fiegna C., Sangiorgi E., and Selmi L. Understanding Quasi-Ballistics Transport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain. IEEE Trans Electron Dev 52 12 (2005) 2727-2735
    • (2005) IEEE Trans Electron Dev , vol.52 , Issue.12 , pp. 2727-2735
    • Palestri, P.1    Esseni, D.2    Eminente, S.3    Fiegna, C.4    Sangiorgi, E.5    Selmi, L.6
  • 4
    • 29244485621 scopus 로고    scopus 로고
    • Understanding quasi-ballistics transport in nano-MOSFETS: Part II Technology scaling along the ITRS
    • Eminente S., Esseni D., Palestri P., Fiegna C., Selmi L., and Sangiorgi E. Understanding quasi-ballistics transport in nano-MOSFETS: Part II Technology scaling along the ITRS. IEEE Trans Electron Dev 52 12 (2005) 2736-2743
    • (2005) IEEE Trans Electron Dev , vol.52 , Issue.12 , pp. 2736-2743
    • Eminente, S.1    Esseni, D.2    Palestri, P.3    Fiegna, C.4    Selmi, L.5    Sangiorgi, E.6
  • 5
    • 0029292268 scopus 로고
    • Monte Carlo Determination of the Intrinsic Small-Signal Equivalent Circuit of MESFETs
    • Gonzàlez T., and Pardo D. Monte Carlo Determination of the Intrinsic Small-Signal Equivalent Circuit of MESFETs. IEEE Trans Electron Dev 42 4 (1995) 605-611
    • (1995) IEEE Trans Electron Dev , vol.42 , Issue.4 , pp. 605-611
    • Gonzàlez, T.1    Pardo, D.2
  • 7
    • 0035505855 scopus 로고    scopus 로고
    • Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies
    • Rengel R., Mateos J., Pardo D., Gonzàlez T., and Martìn M.J. Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies. Semicond Sci Technol 16 (2001) 939-946
    • (2001) Semicond Sci Technol , vol.16 , pp. 939-946
    • Rengel, R.1    Mateos, J.2    Pardo, D.3    Gonzàlez, T.4    Martìn, M.J.5
  • 8
    • 0036852015 scopus 로고    scopus 로고
    • Numerical and experimental study of a 0.25 m fully depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behavior
    • Rengel R., et al. Numerical and experimental study of a 0.25 m fully depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behavior. Semicond Sci Technol 17 (2002) 1149-1156, 200
    • (2002) Semicond Sci Technol , vol.17
    • Rengel, R.1
  • 9
    • 14844291284 scopus 로고    scopus 로고
    • Palestri P, Esseni D, Abramo A, Clerc R, Selmi L. Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool. In: Proc European solid state device research conference 2003; 2003. p. 407-10.
  • 11
    • 34047274931 scopus 로고    scopus 로고
    • 2-based Gate Stacks, in IEDM Technical Digest, 2005. p. 623-26.
  • 12
    • 34047272808 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductor, 2003.
  • 13
    • 0026257978 scopus 로고
    • An extended proof of the Ramo-Shockley Theorem
    • Kim H., Min H., Tang T., and Park Y. An extended proof of the Ramo-Shockley Theorem. Solid State Electron 34 11 (1992) 1251-1253
    • (1992) Solid State Electron , vol.34 , Issue.11 , pp. 1251-1253
    • Kim, H.1    Min, H.2    Tang, T.3    Park, Y.4
  • 15
    • 33744802250 scopus 로고    scopus 로고
    • Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme
    • Palestri P., Barin N., Esseni D., and Fiegna C. Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme. IEEE Trans Electron Dev 53 6 (2006) 1433-1442
    • (2006) IEEE Trans Electron Dev , vol.53 , Issue.6 , pp. 1433-1442
    • Palestri, P.1    Barin, N.2    Esseni, D.3    Fiegna, C.4
  • 17
    • 0022723607 scopus 로고
    • A simple regional analysis of transit times in bipolar transistors
    • van den Biesen J.J.H. A simple regional analysis of transit times in bipolar transistors. Solid State Electronics 29 5 (1986) 529-534
    • (1986) Solid State Electronics , vol.29 , Issue.5 , pp. 529-534
    • van den Biesen, J.J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.