Geometry dependence of CMOS-compatible, polysilicon, leaky-mode photodetectors

IEEE Photonics Technology Letters

Volumn 19, Issue 7, 2007, Pages 513-515

  Pownall, Robert ^a   Yuan, Guangwei ^a   Chen, Tom W ^a   Nikkel, Phil ^b   Lear, Kevin L ^a  

^a Veterinary Dentistry and Oral Surgery   (United States)

^b BROADCOM CORPORATION   (United States)

Author keywords

Complementary metal oxide semiconductor (CMOS) compatible optoelectronic integrated circuits; Leaky mode metal semiconductor metal (MSM) photodiodes; Optical interconnects; Photoconductivity; Waveguides

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; INTEGRATED OPTOELECTRONICS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTODIODES; POLYSILICON;

COMPATIBLE OPTOELECTRONIC INTEGRATED CIRCUITS; LEAKY-MODE METAL-SEMICONDUCTOR-METAL (MSM) PHOTODIODES; POLYSILICON PHOTODIODES;

PHOTODETECTORS;

EID: 34047238540     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.893573     Document Type: Article

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