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Physica Status Solidi (B) Basic Research

Volumn 210, Issue 2, 1998, Pages 327-335

Bound excitons in wide-gap II-VI and nitride semiconductors. Comparison of optical studies of shallow dopants in these materials

(3) Hoffmann, A a Kutzer, V a Goldner A a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032271586 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-3951(199812)210:2<327::AID-PSSB327>3.0.CO;2-T Document Type: Article

Times cited : (5)

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15
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