Investigation of CdTex and Cd1-xZnxTe schottky barrier diode structure based γ-ray detectors

Materials and Manufacturing Processes

Volumn 22, Issue 3, 2007, Pages 375-378

  Veeramani, P ^a   Haris, M ^a   Babu, S Moorthy ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

Ray detector; CdTe; CdZnTe; I V Characteristics; Schottky barrier diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ENERGY GAP; GAMMA RAYS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING CADMIUM TELLURIDE; STOICHIOMETRY; THERMAL EVAPORATION;

ATOMIC NUMBER; CADMIUM ZINC TELLURIDE (CDZNTE); PHOTON ABSORPTION; X RAY DETECTION;

RADIATION DETECTORS;

EID: 33947699278     PISSN: 10426914     EISSN: 15322475     Source Type: Journal    
DOI: 10.1080/10426910701190873     Document Type: Article

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