The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport

Journal of Crystal Growth

Volumn 254, Issue 3-4, 2003, Pages 316-328

  Palosz, W ^a   Grasza, K ^b   Durose, K ^c   Halliday, D P ^c   Boyall, N M ^c   Dudley, M ^d   Raghothamachar, B ^d   Cai, L ^d  

^a NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^b POLISH ACADEMY OF SCIENCES   (Poland)

^c DURHAM UNIVERSITY   (United Kingdom)

^d STONY BROOK UNIVERSITY   (United States)

Author keywords

A1. Cool down; A1. Defects; A1. Dislocation distribution; A1. Synchrotron white beam X ray topography; B1. CdTe

Indexed keywords

CADMIUM COMPOUNDS; COOLING; DISLOCATIONS (CRYSTALS); ETCHING; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION;

DISLOCATION DISTRIBUTIONS;

CRYSTAL GROWTH;

EID: 0037809443     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01183-7     Document Type: Article

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