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Volumn 2005, Issue , 2005, Pages

Technological realization of low on-resistance FLYMOS™ transistors dedicated to automotive applications

Author keywords

Automotive application; MOSFET; Power semiconductor device

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; MOSFET DEVICES; TRANSISTORS;

EID: 33947654465     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (11)
  • 1
    • 0034827496 scopus 로고    scopus 로고
    • The Future of Electronics in Automobiles
    • F.G. Kassakian, D.J. Perreault, "The Future of Electronics in Automobiles", Proc. ISPSD'2001, pp. 15-19.
    • (2001) Proc. ISPSD , pp. 15-19
    • Kassakian, F.G.1    Perreault, D.J.2
  • 3
    • 0034448418 scopus 로고    scopus 로고
    • A New Generation of Power Unipolar Devices: The Concept of the FLoating Islands MOS Transistor (FLIMOST)
    • N. Cézac, F. Morancho, P. Rossel, H. Tranduc, A. Peyre-Lavigne, "A New Generation of Power Unipolar Devices: the Concept of the FLoating Islands MOS Transistor (FLIMOST)", Proc. ISPSD'2000, pp. 69-72.
    • (2000) Proc. ISPSD , pp. 69-72
    • Cézac, N.1    Morancho, F.2    Rossel, P.3    Tranduc, H.4    Peyre-Lavigne, A.5
  • 4
    • 0033749206 scopus 로고    scopus 로고
    • A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped regions
    • June
    • X.B. Chen, X. Wang, J.K.O. Sin, "A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped regions", IEEE Trans. On Electron Devices, Vol. 47, no6, pp. 1280-1285, June 2000.
    • (2000) IEEE Trans. On Electron Devices , vol.47 , Issue.NO6 , pp. 1280-1285
    • Chen, X.B.1    Wang, X.2    Sin, J.K.O.3
  • 5
    • 0036053239 scopus 로고    scopus 로고
    • Ultra Low On-Resistance SBD with P-Buried Floating Layer
    • Santa Fe, USA, pp, June
    • W. Saitoh, I. Omura, K. Tokano, T. Ogura, H. Ohashi, "Ultra Low On-Resistance SBD with P-Buried Floating Layer", Proceedings ISPSD'02 (Santa Fe, USA), pp. 33-36, June 2002.
    • (2002) Proceedings ISPSD'02 , pp. 33-36
    • Saitoh, W.1    Omura, I.2    Tokano, K.3    Ogura, T.4    Ohashi, H.5
  • 6
    • 0031251517 scopus 로고    scopus 로고
    • Theory of Semiconductor Superjunction Devices
    • T. Fujihira, "Theory of Semiconductor Superjunction Devices", Japanese Journal of Applied Physics, Vol. 36, pp. 6254-6262, 1997.
    • (1997) Japanese Journal of Applied Physics , vol.36 , pp. 6254-6262
    • Fujihira, T.1
  • 9
    • 0034449683 scopus 로고    scopus 로고
    • High-Density Low On-resistance MOSFETs Employing Oxide Spacers and Self-Align Technique for DC/DC Converter
    • Toulouse, pp, May
    • J. Kim, T.M. Roh, S-G. Kim, Q.S. Song, J.G. Koo, K.S. Nam, K-I. Cho, D.S. Ma, "High-Density Low On-resistance MOSFETs Employing Oxide Spacers and Self-Align Technique for DC/DC Converter", Proceedings ISPSD'2000 (Toulouse), pp. 381-384, May 2000.
    • (2000) Proceedings ISPSD , pp. 381-384
    • Kim, J.1    Roh, T.M.2    Kim, S.-G.3    Song, Q.S.4    Koo, J.G.5    Nam, K.S.6    Cho, K.-I.7    Ma, D.S.8
  • 10
    • 0034449595 scopus 로고    scopus 로고
    • High Density, Sub 10mOhm Rdson 100Volt N-Channel FETs for Automotive Applications
    • Toulouse, pp, May
    • S. Sobhani, D. Kinzer, L. Ma, D. Asselanis, "High Density, Sub 10mOhm Rdson 100Volt N-Channel FETs for Automotive Applications", Proc. ISPSD'2000 (Toulouse), pp. 373-376, May 2000.
    • (2000) Proc. ISPSD , pp. 373-376
    • Sobhani, S.1    Kinzer, D.2    Ma, L.3    Asselanis, D.4
  • 11
    • 0034835343 scopus 로고    scopus 로고
    • Shallow angle implantation for extended trench gate power MOSFETs with superjunction structure
    • Osaka, pp, June
    • Y. Hattori, T. Suzuki, M. Kodama, E. Hayashi, T. Uesugi, "Shallow angle implantation for extended trench gate power MOSFETs with superjunction structure", Proceedings ISPSD'01 (Osaka), pp. 427-430, June 2001.
    • (2001) Proceedings ISPSD'01 , pp. 427-430
    • Hattori, Y.1    Suzuki, T.2    Kodama, M.3    Hayashi, E.4    Uesugi, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.