Shallow angle implantation for extended trench gate power MOSFETs with super junction structure

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 427-430

  Hattori, Y ^a   Suzuki, T ^a   Kodama, M ^a   Hayashii, E ^a   Uesugi, T ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CRYSTAL IMPURITIES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); ION IMPLANTATION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

SUPER JUNCTION STRUCTURES;

MOSFET DEVICES;

EID: 0034835343     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)