Magnetic response of Mn-doped amorphous porous Ge fabricated by ion-implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 365-368

  Passacantando, M ^a   Ottaviano, L ^a   Grossi, V ^a   Verna, A ^a   D'Orazio, F ^a   Lucari, F ^a   Impellizzeri, G ^b   Priolo, F ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

Germanium; Ion implantation; Magneto optics; Manganese; Scanning electron microscopy; X ray photoelectron spectroscopy

Indexed keywords

ION IMPLANTATION; KERR MAGNETOOPTICAL EFFECT; MANGANESE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS POROUS IMPLANTED LAYER; MAGNETIC RESPONSE;

AMORPHOUS SEMICONDUCTORS;

EID: 33947651035     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.044     Document Type: Article

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