Observation of the Si(111)7 × 7 atomic structure using non-contact scanning nonlinear dielectric microscopy

Nanotechnology

Volumn 18, Issue 8, 2007, Pages

  Hirose, Ryusuke ^a   Ohara, Koya ^a   Cho, Yasuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CONDUCTIVE MATERIALS; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC PROPERTIES; ELECTRON TUNNELING; MICROSCOPIC EXAMINATION; SILICON;

ATOMIC RESOLUTION; SCANNING NONLINEAR DIELECTRIC MICROSCOPY (SNDM); TUNNELLING CURRENT;

CRYSTALLINE MATERIALS;

SILICON;

ANALYTIC METHOD; ATOMIC PARTICLE; CHEMICAL STRUCTURE; CONFERENCE PAPER; ELECTRIC CONDUCTIVITY; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; TOPOGRAPHY;

EID: 33947513593     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/8/084014     Document Type: Conference Paper

References (9)

1. Cho Y, Kazuta S and Matsuura K 1999 Appl. Phys. Lett. 72 2833
2. Odagawa H and Cho Y 2000 Surf. Sci. 463 L621
3. Honda K, Hashimoto S and Cho Y 2005 Nanotechnology 16 90
4. Honda K, Hashimoto S and Cho Y 2006 Nanotechnology 17 S185
5. Cho Y and Ohara K 2001 Appl. Phys. Lett. 79 3842
6. Ohara K and Cho Y 2005 Nanotechnology 16 54
7. Ruda H E and Shik A 2003 Phys. Rev. B 67 235309
8. Ruda H E and Shik A 2005 Phys. Rev. B 71 075316
9. Ohara K and Cho Y 2004 J. Appl. Phys. 96 7460