Visualization of charges stored in the floating gate of flash memory by scanning nonlinear dielectric microscopy

Nanotechnology

Volumn 17, Issue 7, 2006, Pages

  Honda, Koichiro ^a   Hashimoto, Sunao ^b   Cho, Yasuo ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC DEVICES; ELECTRONS; NONLINEAR SYSTEMS; SCANNING; SILICATES;

BLACK CONTRAST REGION; FLOATING GATE; SCANNING NONLINEAR DIELECTRIC MICROSCOPY (SNDM);

FLASH MEMORY;

EID: 33644980778     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/7/S14     Document Type: Article

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