Electron-polariton scattering in semiconductor microcavities

Physical Review Letters

Volumn 90, Issue 20, 2003, Pages

  Lagoudakis, P G ^a   Martin, M D ^a   Baumberg, J J ^a   Qarry, A ^b   Cohen, E ^b   Pfeiffer, L N ^c  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRONS; EXCITONS; GROUND STATE; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

BOSE AMPLIFICATION; ELECTRON POLARITON SCATTERING; POLARITONS; SEMICONDUCTOR MICROCAVITIES; TWO DIMENSIONAL ELECTRON GAS;

ELECTRON SCATTERING;

EID: 0038466155     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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