Kondo effect in silicon quantum dots with valley degeneracy

AIP Conference Proceedings

Volumn 850, Issue , 2006, Pages 1382-1383

  Eto, M ^a   Hada, Y ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Kondoeffect; Multivalley; Quantumdot; Silicon

Indexed keywords

EID: 33947492220     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2355221     Document Type: Conference Paper

References (14)

1. Y. Takahashi et al., Electron. Lett. 31, 136 (1995);
2. S. Horiguchi et al., Jpn. J. Appl. Phys. 40, L29 (2001);
3. L. P. Rokhinson et al., Phys. Rev. B 63, 35321 (2001).
4. Y. Hada and M. Eto, Phys. Rev. B 68, 155322 (2003);
5. Y. Hada and M. Eto, Jpn. J. Appl. Phys. 43, 7329 (2004).
6. Y. Hada and M. Eto, Phys. Stat. Sol. (c) 2, 3035 (2005).
7. We assume that the dot size is smaller than 15nm. Otherwise, one of the two electrons occupy the upper level and makes a spin triplet with the other electron in the same valley [2].
8. L. P. Rokhinson et al., Phys. Rev. B 60, R16319 (1999).
9. L. Borda et al., Phys. Rev. Lett. 90, 26602 (2003).
10. S. Sasaki et al., Phys. Rev. Lett. 93, 17205 (2004);
11. M. Eto, J. Phys. Soc. Jpn. 74, 95 (2005).
12. S. Sasaki et al., Nature 405, 764 (2000);
13. M. Eto and Yu. V. Nazarov, Phys. Rev. Lett. 85, 1306 (2000);
14. M. Pustilnik and L. I. Glazman, Phys. Rev. Lett. 85, 2993 (2000).