Electronic states in silicon quantum dot devices

Physica Status Solidi C: Conferences

Volumn 2, Issue 8, 2005, Pages 3035-3038

  Hada, Y ^a   Eto, M ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; IMPURITIES; MATHEMATICAL MODELS; SILICON;

ATOMIC STRUCTURE; CONDUCTION BAND; ONE-ELECTRON LEVELS; TIGHT-BINDING MODEL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27344444676     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460760     Document Type: Conference Paper

References (11)

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4. L. P. Rokhinson et al., Phys. Rev. B 63, 35321 (2001);
5. K. Ono, private communications.
6. Y. Hada and M. Eto, Phys. Rev. B 68, 155322 (2003).
7. Y. Hada and M. Eto, Jpn. J. Appl. Phys. in press.
8. J. M. Luttinger and W. Kohn, Phys. Rev. 97, 869 (1955).
9. 0 in GaAs. Hence the orbital effect is much smaller than in GaAs quantum dots.
10. J. M. Jancu et al., Phys. Rev. B 57, 6493 (1998).
11. 2 where atom i is located at z.