Exchange coupling in silicon double quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 7329-7336

  Hada, Yoko ^a   Eto, Mikio ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Double quantum dot; Exchange coupling; Multivalley; Quantum computation; Silicon

Indexed keywords

ANTIFERROMAGNETISM; APPROXIMATION THEORY; ELECTRON TUNNELING; HAMILTONIANS; MATHEMATICAL MODELS; SILICON;

DOUBLE QUANTUM DOTS; EXCHANGE COUPLING; INTERDOT TUNNEL COUPLING; QUANTUM COMPUTATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 10844220794     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7329     Document Type: Article

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29. n(r) is different owing to the anisotropy of effective mass.
30. ex is assumed to be much smaller than the energy splitting by the scattering, 2v.
31. 2|)|φ+φ+〉, are negligible due to the integration of rapidly oscillating factors.
32. The intradot exchange integrals are negligible as discussed in §2. The interdot exchange integrals are also very small when the dot-dot distance 2|d| is not too small.
33. 1 = 1.2 meV. Since only the lowest levels are considered in our calculations, our estimation of J might not be justified. However, the contribution from the upper levels is not large as long as the level spacing is smaller than the tunnel couplings between the quantum dots, t, t′, and intervalley scattering v.