Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga 0.83As/GaAs quantum wells with high hole mobility

JETP Letters

Volumn 85, Issue 1, 2007, Pages 27-33

  Aronzon, B A ^a,b   Kul'Bachinskii V A ^c   Gurin, P V ^c   Davydov, A B ^a,b   Ryl'Kov, V V ^a,b   Granovskii A B ^c   Vikhrova, O V ^d   Danilov, Yu A ^d   Zvonkov, B N ^d   Horikoshi, Y ^e   Onomitsu, K ^e  

^a KURCHATOV INSTITUTE   (Russian Federation)

^b INSTITUTE FOR THEORETICAL AND APPLIED ELECTRODYNAMICS   (Russian Federation)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

^d LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33947417292     PISSN: 00213640     EISSN: 10906487     Source Type: Journal    
DOI: 10.1134/S0021364007010067     Document Type: Article

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