Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers

Applied Physics Letters

Volumn 82, Issue 8, 2003, Pages 1206-1208

  Yuldashev, Sh U ^a,d   Im, Hyunsik ^a   Yalishev, V Sh ^a,d   Park, C S ^a   Kang, T W ^a   Lee, Sanghoon ^b   Sasaki, Y ^c   Liu, X ^c   Furdyna, J K ^c  

^a Dongguk University   (South Korea)

^b Korea University   (South Korea)

^c UNIVERSITY OF NOTRE DAME   (United States)

^d S YU YUNUSOV INSTITUTE OF THE CHEMISTRY OF PLANT SUBSTANCES   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FERMI LEVEL; HALL EFFECT; MAGNETIC FIELDS; MAGNETIC MOMENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SQUIDS; TEMPERATURE MEASUREMENT;

NONMAGNETIC ACCEPTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037463297     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1554482     Document Type: Article

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