Observation of abrupt metallic transitions in p-type GaAs devices and comparison with avalanche breakdown in the InGaAs APD

Journal of the Korean Physical Society

Volumn 47, Issue 1, 2005, Pages 1-5

  Youn, Doo Hyeb ^a   Kim, Hyun Tak ^a   Kang, Kang Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Abrupt current jump; Breakdown; Current voltage characteristics; GaAs

Indexed keywords

EID: 23744450805     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. A. Gold, Phys. Rev. B. 44, 8818 (1984).
2. J.Yoon, C. C. Li, D. Shahar, D. C. Tsui and M. Shayegan, Phys. Rev. Lett. 82, 1744 (1999).
3. V. M. Pudalov, DIorio and J. W. Cambell, JEPT Lett. 57, 608 (1993).
4. A. A. Shashkin, G. V. Kravchenko and V. T. Dolgopolov, JEPT Lett. 57, 220 (1993).
5. S. Chakravarty, L. Yin and E. Abrahams, Phys. Rev. B. 58, 559 (1998).
6. E. Abrahams, S. V. Kravchenko and M. P. Sarachik, Rev. Mod. Phys. 73, 251 (2001).
7. J. Zhu, H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin and K. W. West, Phys. Rev. Lett. 90, 56805 (2003).
8. M. P. Lilly, J. L. Reno, J. A. Simmons, I. B. Spielman, J. P. Eisenstein, L. N. Pfeiffer, K. W. West, E. H. Hwang and S. D. Sarma, Phys. Rev. Lett. 90, 56806 (2003).
9. R. Leturcq, D. LHote, R. Tourbot, C. J. meller and M. Henini, Phys. Rev. Lett. 90, 76402 (2003).
10. J. P. Noh, F. Shimogishi, Y. Idutsu and N. Otsuka, Phys. Rev. B. 69, 45321 (2004).
11. H. T. Kim, B. G. Chae, D. H. Youn, S. L. Maeng, G. O. Kim, K. Y. Kang and Y. S. Lim, New J. Phys. 6, 52 (2004).
12. H. T. Kim and Y. Yamamoto, J. Korean Phys. Soc. 28, 799 (1995).
13. B. G. Chae, D. H. Youn, H. T. Kim, S. L. Maeng and K. Y. Kang, J. Korean Phys. Soc. 44, 884 (2004).
14. P. Bhattacharya, Semiconductor Opto-Electronic Devices (Prentice-Hall, Inc., 1994), p. 365.