Simulation studies of persistent photoconductivity and filamentary conduction in opposed contact semi-insulating GaAs high power switches

Journal of Applied Physics

Volumn 86, Issue 7, 1999, Pages 3833-3843

  Joshi, R P ^a   Kayasit, P ^a   Islam, N ^b   Schamiloglu, E ^b   Fleddermann, C B ^b   Schoenberg, J ^c  

^a Old Dominion University   (United States)

^b MSC01 1070   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001411645     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371295     Document Type: Article

References (37)

1. G. M. Loubriel et al., IEEE Trans. Plasma Sci. 25, 124 (1997).
2. For example, Special Issue of IEEE Trans. Electron Devices 38, 685 (1991).
3. F. J. Zutavern and G. M. Laibriel, in High Power Optically Activated Solid-State Switches, edited by A. Rosen and F. Zutavem (Artech House, Boston, 1994).
4. G. Mourou, W. H. Knox, and S. Williamson, in Picosecond Optoelectronic Devices, edited by C. H. Lee (Academic, New York, 1984), pp. 219-248.
5. G. M. Loubriel, F. J. Zutavern, H. P. Hjalmarson, R. R. Gallegos, W. D. Helgeson, and M. O'Malley, Appl. Phys. Lett. 64, 3323 (1994).
6. R. A. Falk, J. Adams, C. D. Capps, S. G. Ferrier, and J. A. Krinsky, IEEE Trans. Electron Devices 42, 43 (1995).
7. W. R. Donaldson, L. Kingsley, M. Weiner, A. Kim, and R. Zet, J. Appl. Phys. 68, 6453 (1990).
8. K. H. Schoenbach, V. K. Lakdawala, R. Germer, and S. Ko, J. Appl. Phys. 63, 2460 (1988); K. H. Schoenbach, R. P. Joshi, F. Peterkin, and R. L. Druce, J. Appl. Phys. 77, 5208 (1995).
9. K. H. Schoenbach, V. K. Lakdawala, R. Germer, and S. Ko, J. Appl. Phys. 63, 2460 (1988); K. H. Schoenbach, R. P. Joshi, F. Peterkin, and R. L. Druce, J. Appl. Phys. 77, 5208 (1995).
10. S. Williamson, G. F. Albrecht, and G. Mourou, Rev. Sci. Instrum. 53, 867 (1982).
11. F. J. Zutavern and G. M. Loubriel, in High Power Optically Activated Solid-State Switches, edited by A. Rosen and F. Zutavern (Artech House, Boston, 1994), pp. 245-296.
12. J. L. Hudgins, D. W. Bailey, R. A. Dougal, and V. Venkatesan, IEEE Trans. Power Electron. 10, 615 (1995).
13. P. J. Stoudt and M. Kushner, J. Appl. Phys. 79, 2084 (1996); 77, 3518 (1995).
14. P. J. Stoudt and M. Kushner, J. Appl. Phys. 79, 2084 (1996); 77, 3518 (1995).
15. L. Partain, D. Day, and R. Powell, J. Appl. Phys. 74, 335 (1993).
16. R. P. Brinkmann, K. H. Schoenbach, D. C. Stoudt, V. K. Lakdawala, G. A. Gerdin, and M. Kennedy, IEEE Trans. Electron Devices 38, 701 (1991).
17. C. D. Capps, R. A. Falk, and J. C. Adams, J. Appl. Phys. 74, 6645 (1993).
18. H. Zhao, P. Hadizad, J. H. Hur, and M. A. Gundersen, J. Appl. Phys. 74, 6645 (1993).
19. W. T. White III, C. G. Dease, M. D. Pocha, and G. H. Khanaka, IEEE Trans. Electron Devices ED-37, 2532 (1990).
20. S. P. Wilson and A. B. Walker, Semicond. Sci. Technol. 13, 190 (1998).
21. N. E. Islam, E. Schamiloglu, and C. B. Fleddermann, Appl. Phys. Lett. 73, 1988 (1998).
22. M. K. Kennedy, R. P. Brinkmann, and K. H. Schoenbach, IEEE Trans. Electron Devices 42, 1009 (1995).
23. M. Kozhevnikov, B. M. Ashkinadze, E. Cohen, and R. Arza, Phys. Rev. B 52, 4855 (1995).
24. R. M. Westervelt and S. W. Teitsworth, J. Appl. Phys. 57, 5457 (1985).
25. For example, B. K. Ridley, Quantum Processes in Semiconductors (Oxford University Press, Oxford, 1988).
26. E. Scholl, Z. Phys. B 46, 23 (1982).
27. A. A. Kastalsky, Phys. Status Solidi A 15, 599 (1973).
28. For example, E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Oxford University Press, Oxford, 1988).
29. R. T. Tung, J. P. Sullivan, and F. Schrey, Mater. Sci. Eng., B 14, 266 (1991).
30. J. P. Sullivan, R. T. Tung, M. R. Pinto, and W. R. Graham, J. Appl. Phys. 70, 7403 (1991).
31. L. Zheng, R. P. Joshi, and C. Fazi, J. Appl. Phys. 85, 3701 (1999).
32. P. G. Neudeck and C. Fazi, J. Appl. Phys. 80, 1219 (1996).
33. P. G. Neudeck, W. Huang, and M. Dudley, IEEE Trans. Electron Devices 46, 478 (1999).
34. F. Piazza, P. C. M. Christianen, and J. C. Maan, Appl. Phys. Lett. 69, 1909 (1996).
35. M. A. Richardson and D. C. Stoudt (private communication).
36. K. S. Yee, IEEE Trans. Antennas Propag. 14, 302 (1966).
37. M. Bhatnagar, B. J. Baliga, H. R. Kirk, and G. A. Rozgonyi, IEEE Trans. Electron Devices 43, 150 (1996).