High field transport in semi-insulating GaAs: A promising material for solid-state detectors

Journal of Applied Physics

Volumn 82, Issue 7, 1997, Pages 3358-3362

  Mares J J ^a   Kristofik J ^a   Hubik P ^a   Jurek, K ^a   Pospisil S ^b   Kubasta J ^b  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1042303419     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365648     Document Type: Article

References (25)

1. F. Dubecký, J. Darmo, I. Bešše, and P. G. Pelfer, in Semi-insulating III-V Materials, edited by M. Godlewski (World Scientific, Singapore. 1994), p. 183.
2. A. Castaldini, A. Cavallini, C. Del Papa, C. Canli, F. Nava, A. Paccagnella, C. Frigeri, L. Zanotti. and C. Lanzieri, in Semi-insulating III-V Materials, edited by M. Godlewski (World Scientific, Singapore, 1994), p. 127.
3. G. Khünel and W. Siegel, in Semi-insulating III-V Materials, edited by M. Godlewski (World Scientific, Singapore, 1994), p. 187.
4. K. Berwick, M. R. Brozel, C. M. Buttar, M. Cowperthwaite, and Y. Hou, Mater. Res. Soc. Symp. Proc. 302, 363 (1993).
5. ;D. S. McGregor and J. E. Kammeraad, in Semiconductors and Semimetals, Vol. 43, edited by T. E. Schlesinger and R. B. James (Academic, New York, 1996), p. 384.
6. G. F. Knoll and D. S. McGregor, Mater. Res. Soc. Symp. Proc. 302, 3 (1993).
7. L. Reimer, Scanning Electron Microscopy (Springer, Berlin, 1985), p. 264.
8. J. J. Mareš, J. Krištofik, V. Šmid, and K. Jurek, in Semi-insulating III-V Materials, edited by M. Godlewski (World Scientific, Singapore, 1994), p. 171.
9. J. J. Mareš, J. Krištofik, and V. Šmid, Semicond. Sci. Technol. 7, 119 (1992).
10. J. F. Keithley, J. R. Yeager, and R. J. Erdman, Low Level Measurements, 3rd ed. (Keithley, Cleveland, 1984), p. 63.
11. L. Reimer, in Physical Methods of Chemistry, Vol. IV-Microscopy, edited by B. W. Rossiter and J. F. Hamilton (Wiley, New York, 1991), p. 285.
12. C. Paracchini and V. Dallacasa, Solid State Commun. 69, 49 (1989).
13. G. Kühnel, W. Siegel, and H. A. Schneider, Phys. Status Solidi A 100, 283 (1987).
14. N. Derhacobian and N. M. Haegel, Phys. Rev. B 44, 12 754 (1991).
15. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 44, 638.
16. V. Šmid, J. J. Mareš, L. Štourač, and J. Krištofik, in Tetrahedrally-Bonded Amorphous Semiconductors, edited by D. Adler and H. Fritzsche (Plenum, New York, 1985), p. 483.
17. W. R. Smythe, Static and Dynamic Electricity, 3rd ed. (McGraw-Hill, New York, 1968), p. 10.
18. J. C. Manifacier and H. K. Henisch, J. Phys. Chem. Solids 41, 1285 (1980).
19. J. J. Mareš, J. Krištofik, V. Šmid, and F. Demi, Solid-State Electron. 31, 1309 (1988).
20. F. W. Schmidlin and G. G. Roberts, Phys. Rev. Lett. 20, 1173 (1968).
21. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970), p. 15.
22. J. B. Gunn, Solid-State Electron. 7, 739 (1964).
23. C. Buttar, Z. Doležal, J. Krištofik, J. Kubašta, V. Linhart, J. J. Mareš, S. Pospišil, S. Walsh, and I. Wilhelm, Nucl. Instrum. Methods. Phys. Res. A. (to be published).
24. C. R. Crowell and S. M. Sze, Appl. Phys. Lett. 9, 242 (1966).
25. G. A. Baraff, Phys. Rev. 128, 2507 (1962).