Percolation transition of the quasi-two-dimensional hole system in δ-doped GaAs structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 4, 2004, Pages

  Noh, J P ^a   Shimogishi, F ^a   Idutsu, Y ^a   Otsuka, N ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; METAL;

ARTICLE; CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); ENERGY; HEAT TREATMENT; HIGH TEMPERATURE; LAW; ROOM TEMPERATURE; THERMAL CONDUCTIVITY;

EID: 1542283813     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.045321     Document Type: Article

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