Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 967-970

  Cerutti, L ^a   Boissier, G ^a   Grech, P ^a   Perona, A ^a   Angellier, J ^a   Rouillard, Y ^a   Tournie E ^a   Genty, F ^a   Dente, G C ^b   Kaspi, R ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials; B3. Mid infrared devices; B3. Quantum well laser diodes

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTONS; QUANTUM WELL LASERS; SEMICONDUCTOR LASERS;

ANTIMONIDES; MID INFRARED DEVICES; QUANTUM WELL LASER DIODES; SEMICONDUCTING III-V MATERIALS;

GALLIUM COMPOUNDS;

EID: 33947404834     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.057     Document Type: Article

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