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Volumn 138, Issue 3, 2007, Pages 271-276

Effect of tin doping on the properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering

Author keywords

Annealing; Indium tin oxide; Physical vapor deposition (PVD); Resistivity; Sputtering; Tin

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); MAGNETRON SPUTTERING; PHYSICAL VAPOR DEPOSITION; THIN FILMS;

EID: 33947386674     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.01.025     Document Type: Article
Times cited : (12)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.