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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 37-41, 2005, Pages

New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy

(5) Feng, Gan a Yoshimoto, Masahiro a Oe, Kunishige a Chayahara, Akiyoshi b Horino, Yuji b

a KYOTO INSTITUTE OF TECHNOLOGY (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

InGaAsBi; MBE; Metastable alloy; RBS; X ray diffraction

Indexed keywords

INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION;

CHANNELING SPECTRA; EPILAYERS; INGAASBI; METASTABLE ALLOY;

INDIUM ALLOYS;

EID: 32044450819 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.L1161 Document Type: Article

Times cited : (53)

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