Relaxation mechanism of the defect-free 3C-SiC epitaxial films grown on step-free 4H SiC mesas

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 279-282

  Du, H ^a   Skowronski, M ^a   Neudeck, P G ^b   Trunek, A J ^b   Spry, D J ^b   Powell, J A ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

3C SiC; Cubic SiC; Defect free; Heteroepitaxy; Mesa; Relaxation mechanism; Step free surface

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; FILM GROWTH; FILM THICKNESS; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

NOMINAL LAYER THICKNESS; RELAXATION MECHANISM; STEP-FREE SURFACE;

SILICON CARBIDE;

EID: 33947323402     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.279     Document Type: Conference Paper

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