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Volumn 142, Issue 4, 2007, Pages 200-205

Anomalous electrical transport properties of Ag/Al bilayers grown on Si by molecular beam epitaxy

Author keywords

A. Metallic bilayers; D. Anomalous resistivity; D. Molecular beam epitaxy

Indexed keywords

ALUMINUM ALLOYS; ELECTRIC RESISTANCE; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; SILICON; TRANSPORT PROPERTIES;

EID: 33947246980     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.02.016     Document Type: Article
Times cited : (4)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.