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Volumn 142, Issue 4, 2007, Pages 200-205
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Anomalous electrical transport properties of Ag/Al bilayers grown on Si by molecular beam epitaxy
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Author keywords
A. Metallic bilayers; D. Anomalous resistivity; D. Molecular beam epitaxy
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Indexed keywords
ALUMINUM ALLOYS;
ELECTRIC RESISTANCE;
EPITAXIAL LAYERS;
MOLECULAR BEAM EPITAXY;
SILICON;
TRANSPORT PROPERTIES;
METALLIC ALLOYS;
TEMPERATURE COEFFICIENT;
SILVER ALLOYS;
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EID: 33947246980
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2007.02.016 Document Type: Article |
Times cited : (4)
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References (23)
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