Morphology-dependent electric transport in textured ultrathin Al films grown on Si

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Aswal, D K ^a,c   Joshi, Niraj ^a   Debnath, A K ^a   Muthe, K P ^a   Gupta, S K ^a   Yakhmi, J V ^a   Vuillaume, Dominique ^b  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

^b CNRS   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GIGASCALE INTEGRATION (GSI); METAL-TO-INSULATOR TRANSITION; ULTRALARGE-SCALE INTEGRATION (ULSI); ULTRATHIN ALUMINUM FILMS;

ALUMINUM; ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE; ELECTRON SCATTERING; METAL INSULATOR TRANSITION; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SILICA; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRATHIN FILMS;

EID: 23844513582     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1977188     Document Type: Article

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