High performance 1.55 μm InGaAsP buried-heterostructure laser diodes fabricated by single-step MOCVD regrowth and self-aligned technique

Journal of the Electrochemical Society

Volumn 154, Issue 4, 2007, Pages

  Hu, Chih Wei ^a   Lee, Feng Ming ^a   Huang, Kun Fu ^a   Tsai, Chia Lung ^b   Wu, Meng Chyi ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD CURRENT DENSITY;

BURIED HETEROSTRUCTURES; MODULATION BANDWIDTH; OPERATING TEMPERATURE; SELF ALIGNED TECHNIQUES;

SEMICONDUCTOR LASERS;

EID: 33947155436     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2433695     Document Type: Article

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