High-temperature and high-speed operation of a 1.3-μm uncooled InGaAsP-InP DFB laser

IEEE Photonics Technology Letters

Volumn 14, Issue 9, 2002, Pages 1240-1242

  Bang, Dongsoo ^b   Shim, Jongin ^a,c   Kang, Joongkoo ^b   Um, Minsik ^b   Park, Sangmin ^b   Lee, Sangmoon ^b   Jang, Donghoon ^b   Eo, Yungseon ^a,c  

^a Samsung Electronics Co Ltd ^*

^b SAMSUNG Electronics   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

1.3 m uncooled laser; Detuning; Fe doped BH; InGaAsP; Loss coupled DFB

Indexed keywords

HETEROJUNCTIONS; LASER TUNING; LIGHT TRANSMISSION; OPTICAL DESIGN; OPTICAL FIBERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

UNCOOLED LASERS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0036742261     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.801044     Document Type: Article

References (9)

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