Gate-voltage control minimizes EMI from IGBTs

Power Electronics Technology

Volumn 30, Issue 2, 2004, Pages

  Idir, N ^a   Franchaud, J J ^a  

^a Université des Sciences

Author keywords

[No Author keywords available]

Indexed keywords

BOOST CONVERTER; COMMON MODE; CONDUCTED EMISSIONS; CONTROL METHODS; CONTROL TECHNIQUES; CURRENTS FLOWING; ELECTROMAGNETIC INTERFERENCE; FREQUENCY BEHAVIOR; HIGH FREQUENCY; HIGH-CURRENT; HIGH-VOLTAGES; MOSFETS; POWER TRANSISTORS; TRANSITION WAVEFORMS;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRIC POTENTIAL; ELECTROMAGNETIC COMPATIBILITY; ELECTROMAGNETIC PULSE; ELECTROMAGNETIC WAVE INTERFERENCE; POWER CONVERTERS; POWER ELECTRONICS; PULSE MODULATION; PULSE WIDTH MODULATION; VOLTAGE CONTROL; VOLTAGE REGULATORS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 75649121474     PISSN: 15402800     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. S.J. Underwood, "DC-DC Converters Supress EMI: Minimizing EMI at its Source." Power Electronics Technology, December 2002.
2. H. Sawezyn, J.J. Franchaud, N. Idir, and R. Bausière, "New Closed-Loop Voltage Control for Insulated Gate Power Transistors," IASTED 2001: Power and Energy Systems, July 3-6, 2001, pp. 365-370, Rhodes, Greece.
3. V. John, B.S. Suh and T. Lipo, "High-Performance Active Gate Drive for High-Power IGBTs," 1999, IEEE Industry Applications, 35, 1108-1117.
4. N. Idir, J. Franchaud, and R. Bausière,"Process and Control of the Power Transistors Commutation, " 1988, Patents n BF98/04251 and n BF99/911887.