Implementation of high peak-current IGBT gate drive circuits in VLSI compatible BiCMOS technology

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 7, 1996, Pages 924-932

  Kuratli, Christoph ^b,d   Huang, Qiuting ^a,b   Biber, Alice ^b,c,e,f  

^a IEEE

^b ETH ZURICH   (Switzerland)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d Integrated Systems Laboratory

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f Landis and Gyr Communications Corp   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR SWITCHES; VLSI CIRCUITS;

BICMOS TECHNOLOGY; BIPOLAR JUNCTION TRANSISTORS; INSULATED GATE BIPOLAR TRANSISTOR; INTEGRATED GATE DRIVE CIRCUITS; INTELLIGENT POWER MODULES; METAL CONDUCTORS;

APPLICATION SPECIFIC INTEGRATED CIRCUITS;

EID: 0030191718     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.508204     Document Type: Article

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