Damage buildup and the molecular effect in Si bombarded with PFn cluster ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 256, Issue 1, 2007, Pages 207-210

  Titov, A I ^a   Azarov, A Yu ^b   Nikulina, L M ^a   Kucheyev, S O ^c  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b Electron Optronic   (Russian Federation)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Cluster ions; Collision cascades; Defects; Ion implantation; Molecular effect; Si; Silicon

Indexed keywords

DYNAMIC ANALYSIS; ION BOMBARDMENT; ION IMPLANTATION; NONLINEAR SYSTEMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SIMULATED ANNEALING;

CLUSTER IONS; COLLISION CASCADES; DAMAGE ACCUMULATION; MOLECULAR EFFECT (ME);

SILICON;

EID: 33947104488     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.004     Document Type: Article

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