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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 194, Issue 3, 2002, Pages 323-332

Molecular effect in semiconductors under heavy-ion bombardment: Quantitative approach based on the concept of nonlinear displacement spikes

(3) Titov, A I a Belyakov, V S a Kucheyev, S O b

a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY (Russian Federation)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

Crystalline amorphous transition; Defects; Implantation; Molecular ion

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL LATTICES; HEAVY IONS; PHASE TRANSITIONS; SEMICONDUCTING SILICON;

MOLECULAR EFFECTS (ME);

ION BOMBARDMENT;

EID: 0036723323 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(02)00784-X Document Type: Article

Times cited : (14)

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