Defect accumulation during room temperature N+ irradiation of silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 119, Issue 4, 1996, Pages 491-500

  Titov, A I ^a,b   Carter, G ^a  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS SILICON; CRYSTAL DEFECTS; ION BEAMS; ION BOMBARDMENT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON;

CRYSTAL DISORDER; DEFECT ACCUMULATION;

ION IMPLANTATION;

EID: 0030397354     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00353-9     Document Type: Article

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