Damage accumulation in Si during N+ and N2+ bombardment along random and channeling directions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 149, Issue 1-2, 1999, Pages 129-135

  Titov, Andrei I ^a   Kucheyev, Sergei O ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

61.72.Cc; 61.72.Dd; 61.80. x; 61.85.+p; Channeling; Defects; Implantation; Molecular effect; Silicon

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ION BEAMS; ION BOMBARDMENT; ORDER DISORDER TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON;

MOLECULAR EFFECT;

RADIATION DAMAGE;

EID: 0033518398     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00641-7     Document Type: Article

References (36)

1. J.A. Davies, in: J.S. Williams, J.M. Poate (Eds.), Ion Implantation and Beam Processing, Academic Press, Sydney, 1984.
2. Moore J.A., Carter G., Tinsley A.W. Radiat. Eff. 25:1975;49.
3. Davies J.A., Foti G., Howe L.M., Mitchell J.B., Winterbon K.B. Phys. Rev. Lett. 34:1975;1441.
4. Thompson D.A., Walker R.S. Nucl. Instr. and Meth. 132:1976;281.
5. Foti G., Vitali G., Davies J.A. Radiat. Eff. 32:1977;187.
6. Beanland D.G., Williams J.S. Radiat. Eff. 36:1978;15.
7. Thompson D.A., Golanski A., Haugen H.K., Howe L.M., Davies J.A. Radiat. Eff. Lett. 50:1980;125.
8. Howe L.M., Rainville M.H., Haugen H.K., Thompson D.A. Nucl. Instr. and Meth. 170:1980;419.
9. Stevanovic D.V., Tognetti N.P., Carter G., Christodoulides C.E., Ibrahim A.M., Thompson D.A. Radiat. Eff. 71:1983;95.
10. Sigmund P. Appl. Phys. Lett. 14:1969;114.
11. Thompson D.A., Walker R.S., Davies J.A. Radiat. Eff. 32:1977;135.
12. Grob A., Grob J.J., Golanski A. Nucl. Instr. and Meth. B. 19/20:1987;55.
13. Xiaoqin Li, Chenglu Lin, Genqin Yang, Zuyao Zhou, Shichang Zou Nucl. Instr. and Meth. B. 55:1991;589.
14. Müller M., Fink D. Radiat. Eff. 133:1995;259.
15. Döbeli M., Ames F., Ender R.M., Suter M., Synal H.A., Vetterli D. Nucl. Instr. and Meth. B. 106:1995;43.
16. E. Kótai, N.Q. Khanh, J. Gyulai, in: J.S. Williams, R.G. Elliman, M.C. Ridgway (Eds.), Ion Beam Modification of Materials, Elsevier, Amsterdam, 1996, p. 823.
17. Abroyan I.A., Nikulina L.M. Semiconductors. 30:1996;990.
18. Abroyan I.A. Bull. Russian Academy Sci. Phys. 60:1996;1065.
19. Abroyan I.A., Nikulina L.M. Semiconductors. 31:1997;999.
20. Titov A.I., Carter G. Nucl. Instr. and Meth. B. 119:1996;491.
21. Nelson R.S. Radiat. Eff. 32:1977;19.
22. Abroyan I.A., Nikulina L.M., Titov A.I. Sov. Phys. Semiconductors. 19:1985;632.
23. Kool W.H., Roosendaal H.E., Wiggers L.M., Saris F.W. Radiat. Eff. 36:1978;41.
24. Abroyan I.A., Titov A.I., Khlebalkin A.V. Sov. Phys. Semiconductors. 13:1979;132.
25. I.A. Abroyan, A.I. Titov, in: Ion Implantation in Semiconductors and Other Materials, Proceedings of the Seventh International Conference, MVSSO Lit. SSR, Vilnius, 1985, p. 128.
26. Abroyan I.A., Konyshev V.V., Titov A.I., Khlebalkin A.V. Sov. Phys. Semiconductors. 15:1981;166.
27. Walker R.S., Thompson D.A. Radiat. Eff. 37:1978;113.
28. Schmid K. Radiat. Eff. 17:1973;201.
29. Biersack J.P., Haggmark L.G. Nucl. Instr. and Meth. 174:1980;257.
30. Gerasimov A.V., Zorin E.I., Pavlov P.V., Tetelbaum D.I. Phys. Stat. Sol. 12:1972;679.
31. Gashtold V.N., Gerasimenko N.N., Dvurechenskii A.V., Smirnov L.S. Sov. Phys. Semiconductors. 9:1975;554.
32. Abroyan I.A., Titov A.I., Khlebalkin A.V. Sov. Phys. Semiconductors. 11:1977;712.
33. Titov A.I., Christodoulides C.E., Carter G., Nobes M.J. Radiat. Eff. 41:1979;107.
34. Wiggers L.W., Kockkoek H.G., Buth A.H., Saris F.W., Roosendaal H.E. Radiat. Eff. 42:1979;77.
35. T. Lohner, M.A. El-Sherbiny, N.Q. Khanh, M. Fried, H. Wormeester, J. Gullai, in: J.S. Williams, R.G. Elliman, M.C. Ridgway (Eds.), Ion Beam Modification of Materials, Elsevier, Amsterdam, 1996, p. 797.
36. Nordlund K., Ghaly M., Averback R.S., Caturla M., Diaz de la Rubia T., Tarus J. Phys. Rev. B. 57:1998;7556.