Low temperature ion implantation for buried layer formation

Conference on Solid State Devices and Materials

Volumn , Issue , 1990, Pages 1163-1164

  Suzuki, T ^a   Yamaguchi, H ^a   Ohzono, S ^a   Natsuaki, N ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - ION IMPLANTATION; SEMICONDUCTOR MATERIALS - DEFECTS;

BURIED LAYER FORMATION; POINT DEFECT MIGRATION; RESIDUAL DEFECT DENSITY REDUCTION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0025545335     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1990.ln-d-7     Document Type: Conference Paper

References (0)