Atomistic simulations of amorphization processes in ion-implanted Si: Roles of defects during amorphization, relaxation, and crystallization

Thin Solid Films

Volumn 272, Issue 2, 1996, Pages 235-243

  Motooka, Teruaki ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Amorphization; Computer simulation; Ion implantation; Silicon

Indexed keywords

ALGORITHMS; AMORPHOUS SILICON; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTALLIZATION; ION IMPLANTATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; QUENCHING; RELAXATION PROCESSES; SEMICONDUCTING SILICON;

ATOMIC CONFIGURATION; ATOMISTIC SIMULATION; DI-INTERSTITIALS; DIVACANCIES;

AMORPHIZATION;

EID: 0029755808     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)06950-X     Document Type: Article

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