Dependence of amorphization energies in SiC on electronic stopping

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 217, Issue 3, 2004, Pages 396-401

  Friedland, E ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; BACKSCATTERING; ELECTRON TRANSITIONS; ION BEAMS; PARTICLE ACCELERATORS; PARTICLE DETECTORS; SILICON CARBIDE; SINGLE CRYSTALS;

ELECTRONIC STOPPING; ION CHANNELING;

ION IMPLANTATION;

EID: 1842740061     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.083     Document Type: Article

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