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Volumn 37, Issue 2, 2007, Pages 213-218

Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SILICON COMPOUNDS; SINGLE CRYSTALS; THERMODYNAMIC STABILITY;

DIVACANCY CONCENTRATION; MONOVACANCIES; SINGLE CRYSTALLINE SILICON; VACANCY TYPE DEFECTS;

POSITRON ANNIHILATION;

EID: 33847756692 PISSN: 12860042 EISSN: 12860050 Source Type: Journal
DOI: 10.1051/epjap:2007018 Document Type: Article

Times cited : (6)

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