Positron annihilations associated with defects in plastically deformed si

Japanese Journal of Applied Physics

Volumn 34, Issue 9R, 1995, Pages 4579-4586

  Kawasuso, Atsuo ^a   Suezawa, Masashi ^b   Hasegawa, Masayuki ^b   Yamaguchi, Sadae ^b   Sumino, Koji ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Deformation; Dislocation; Positron annihilation. Si

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ETCHING; FERMI LEVEL; PLASTIC DEFORMATION; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BORON; SPECIMEN PREPARATION;

ELECTRON SPIN RESONANCE; HIGH TEMPERATURE ANNEALING; ISOCHRONAL ANNEALING; POSITRON ANNIHILATION SPECTROSCOPY; POSITRON LIFETIME MEASUREMENT; VAN DER PAUW METHOD;

SEMICONDUCTING SILICON;

EID: 0029368406     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.4579     Document Type: Article

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