MRAM with improved magmetic tunnel junction material

Digests of the Intermag Conference

Volumn , Issue , 2002, Pages

  Kano, Hiroshi ^a   Bessho, Kazuhiro ^a   Higo, Yutako ^a   Ohba, Kazuhiro ^a   Hashimoto, Minoru ^a   Mizuguchi, Tetsuya ^a   Hosomi, Masanori ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CMOS INTEGRATED CIRCUITS; CURVE FITTING; ELECTRIC POTENTIAL; MAGNETIC ANISOTROPY; MAGNETIZATION; MAGNETORESISTANCE; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTION (MTJ) MATERIALS;

RANDOM ACCESS STORAGE;

EID: 0036907999     PISSN: 00746843     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. For example; Y. Zhen, and J.G. Zhu, IEEE Trans. on Magn., vol. 32, p. 4237, 1996.