Physical models for degradation effects in polysilicon thin-film transistors

IEEE Transactions on Electron Devices

Volumn 40, Issue 5, 1993, Pages 890-897

  Hack, Michael ^a   Lewis, Alan G ^a   Wu, I Wei ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; DEGRADATION; HOT CARRIERS; SEMICONDUCTING SILICON; TRANSIENTS;

BIAS STRESS; POLYSILICON THIN FILM TRANSISTORS;

THIN FILM DEVICES;

EID: 0027591006     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.210195     Document Type: Article

References (17)

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