-
1
-
-
0024612018
-
High-performance low-temperature poly-Si n-channel TFT's for LCD's
-
Feb.
-
A. Mimura, N. Konishi, K. Ono, J.-I. Ohwada, Y. Hosokawa, Y. A. Ono, T. Suzuki, K. Miyata, and H. Kawakami, "High-performance low-temperature poly-Si n-channel TFT's for LCD's," IEEE Trans. Electron Devices, vol. 36, p. 418, Feb. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 418
-
-
Mimura, A.1
Konishi, N.2
Ono, K.3
Ohwada, J.-I.4
Hosokawa, Y.5
Ono, Y.A.6
Suzuki, T.7
Miyata, K.8
Kawakami, H.9
-
2
-
-
84945714601
-
Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline silicon
-
Feb.
-
S. D. S. Malhi, H. Shichijo, S. K. Banerjee, R. Sunderesan, M. Elehy, G. P. Pollack, W. F. Richardson, A. H. Shah, L. R. Hite, R. Womack, P. K. Chatterjee, and H. W. Lam, "Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline silicon," IEEE Trans. Electron Devices, vol. ED-32, p. 258, Feb. 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 258
-
-
Malhi, S.D.S.1
Shichijo, H.2
Banerjee, S.K.3
Sunderesan, R.4
Elehy, M.5
Pollack, G.P.6
Richardson, W.F.7
Shah, A.H.8
Hite, L.R.9
Womack, R.10
Chatterjee, P.K.11
Lam, H.W.12
-
3
-
-
0023401951
-
High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films
-
Aug.
-
M. K. Hatalis and D. W. Greve, "High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films," IEEE Electron Device Lett., vol. EDL-8, p. 361, Aug. 1987.
-
(1987)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 361
-
-
Hatalis, M.K.1
Greve, D.W.2
-
4
-
-
33747286911
-
Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films
-
_, "Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films," J. Appl. Phys., vol. 63, p. 2260, 1988.
-
(1988)
J. Appl. Phys.
, vol.63
, pp. 2260
-
-
-
5
-
-
0026258097
-
Poly-Si thin-film transistors fabricated with rapid thermal-annealed silicon films
-
M. Bonnel, N. Duhamel, M. Guendouz, L. Haji, B. Loisel, and P. Ruault, "Poly-Si thin-film transistors fabricated with rapid thermal-annealed silicon films," Jpn. J. Appl. Phys., vol. 30, no. 11B, p. L1924, 1991.
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, Issue.11 B
-
-
Bonnel, M.1
Duhamel, N.2
Guendouz, M.3
Haji, L.4
Loisel, B.5
Ruault, P.6
-
6
-
-
0001170030
-
In situ acoustic temperature tomography of semiconductor wafers
-
F. L.. Degertekin, J. Pei, B. T. Khuri-Yakub, and K. C. Saraswat, "In situ acoustic temperature tomography of semiconductor wafers," Appl. Phys. Lett., vol. 64, no. 11, p. 1338, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, Issue.11
, pp. 1338
-
-
Degertekin, F.L.1
Pei, J.2
Khuri-Yakub, B.T.3
Saraswat, K.C.4
-
7
-
-
0030394942
-
A novel technique for in situ monitoring of crystallinity and temperature during rapid thermal annealing of thin Si/Si-Ge films on quartz/glass
-
to be published
-
V. Subramanian, F. L. Degertekin, P. Dankoski, B. T. Khuri-Yakub, and K. C. Saraswat, "A novel technique for in situ monitoring of crystallinity and temperature during rapid thermal annealing of thin Si/Si-Ge films on quartz/glass," in Proc. Mater. Res. Soc. 1996 Spring Meet., Flat-Panel Display Mater., San Francisco, CA, to be published.
-
Proc. Mater. Res. Soc. 1996 Spring Meet., Flat-Panel Display Mater., San Francisco, CA
-
-
Subramanian, V.1
Degertekin, F.L.2
Dankoski, P.3
Khuri-Yakub, B.T.4
Saraswat, K.C.5
-
8
-
-
0344683554
-
Polycrystalline silicon thin films processed with silicon ion implantation and subsequent sold-phase crystallization: Theory, experiments, and thin-film transistor applications
-
N. Yamauchi and R. Reif, "Polycrystalline silicon thin films processed with silicon ion implantation and subsequent sold-phase crystallization: Theory, experiments, and thin-film transistor applications," J. Appl. Phys., vol. 75, no. 7, p. 3235, 1994.
-
(1994)
J. Appl. Phys.
, vol.75
, Issue.7
, pp. 3235
-
-
Yamauchi, N.1
Reif, R.2
-
9
-
-
0018541460
-
Crystallization in amorphous silicon
-
K. Zellama, P. Germain, S. Squelard, J. C. Bourgoin, and P. A. Thomas, "Crystallization in amorphous silicon," J. Appl. Phys., vol. 50, no. 11, p. 6995, 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, Issue.11
, pp. 6995
-
-
Zellama, K.1
Germain, P.2
Squelard, S.3
Bourgoin, J.C.4
Thomas, P.A.5
-
10
-
-
3643083219
-
Rapid thermal processing for flat-panel displays
-
SEMI-CON/WEST
-
J. Fair, J. Mehlhaff, R. Fulks, and I.-W. Wu, "Rapid thermal processing for flat-panel displays," in Int. Flat-Panel Display Conf., SEMI-CON/WEST, 1992, p. A109.
-
(1992)
Int. Flat-Panel Display Conf.
-
-
Fair, J.1
Mehlhaff, J.2
Fulks, R.3
Wu, I.-W.4
-
12
-
-
0027591211
-
Thin-film transistors with polycrystalline silicon prepared by a new annealing method
-
K-S. Nam, Y-H. Song, J-T. Back, H-J. Kong, and S-S. Lee, "Thin-film transistors with polycrystalline silicon prepared by a new annealing method," Jpn. J. Appl. Phys., vol. 32, no, 5A, p. 1908, 1993.
-
(1993)
Jpn. J. Appl. Phys.
, vol.32
, Issue.5 A
, pp. 1908
-
-
Nam, K.-S.1
Song, Y.-H.2
Back, J.-T.3
Kong, H.-J.4
Lee, S.-S.5
-
13
-
-
0028427123
-
Rapid thermal multiprocessing for a programmable factory for adaptive manufacturing of IC's
-
Feb.
-
K. C. Saraswat, P. P. Apte, L. Booth, Y. Chen, P. C. P. Dankoski, F. L. Degertekin, G. F. Franklin, B. T. Khuri-Yakub, M. M. Moslehi, C. Schaper, P. J. Gyugi, Y. J. Lee, J. Pei, and S. C. Wood, "Rapid thermal multiprocessing for a programmable factory for adaptive manufacturing of IC's," IEEE Trans. Semiconduct. Manufact., vol. 7, p. 159, Feb. 1994.
-
(1994)
IEEE Trans. Semiconduct. Manufact.
, vol.7
, pp. 159
-
-
Saraswat, K.C.1
Apte, P.P.2
Booth, L.3
Chen, Y.4
Dankoski, P.C.P.5
Degertekin, F.L.6
Franklin, G.F.7
Khuri-Yakub, B.T.8
Moslehi, M.M.9
Schaper, C.10
Gyugi, P.J.11
Lee, Y.J.12
Pei, J.13
Wood, S.C.14
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