Ge-induced enhancement of solid-phase crystallization of Si on SiO2

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 195-198

  Yamaguchi, Shinya ^a   Park, Seong kee ^a   Sugii, Nobuyuki ^a   Nakagawa, Kiyokazu ^a   Miyao, Masanobu ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL LATTICES; CRYSTALLIZATION; ELLIPSOMETRY; FILM GROWTH; NUCLEATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICA; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS;

ELLIPSOMETRIC SPECTROSCOPY; SOLID-PHASE CRYSTALLIZATION;

SEMICONDUCTING FILMS;

EID: 0034225275     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00805-1     Document Type: Article

References (4)

1. Pickering C., Carline R.T. J. Appl. Phys. 75:1994;4642.
2. Cardona M., Pollak F.H. Phys. Rev. 142:1966;530.
3. Olson G.L., Roth J.A. Handbook of Crystal Growth. vol. 3:1994;274 Elsevier, Amsterdam.
4. Nakagawa K., Sugii N., Yamaguchi S., Miyao M. J. Cryst. Growth. 201:1999;560.